- 部品番号 VWM200-01P
- メーカー IXYS Corporation
- 説明 MOSFET 6N-CH 100V 210A V2
-
Lead Free / RoHS
部品番号
VWM200-01P
メーカー
IXYS Corporation
説明
MOSFET 6N-CH 100V 210A V2
Lead Free / RoHS
在庫と価格
Request Quotation
仕様
| Drain to Source Voltage (Vdss): | 100V |
|---|---|
| Package / Case: | V2-PAK |
| Mounting Type: | Through Hole |
| Packaging: | Bulk |
| Supplier Device Package: | V2-PAK |
| Vgs(th) (Max) @ Id: | 4V @ 2mA |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK |
| FET Feature: | Standard |
| Power - Max: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | 6 N-Channel (3-Phase Bridge) |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 210A |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 430nC @ 10V |
| Operating Temperature: | -40°C ~ 175°C (TJ) |