VWM200-01P
IXYS Corporation
MOSFET 6N-CH 100V 210A V2
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Drain to Source Voltage (Vdss): | 100V |
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Package / Case: | V2-PAK |
Mounting Type: | Through Hole |
Packaging: | Bulk |
Supplier Device Package: | V2-PAK |
Vgs(th) (Max) @ Id: | 4V @ 2mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK |
FET Feature: | Standard |
Power - Max: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
FET Type: | 6 N-Channel (3-Phase Bridge) |
Series: | - |
Current - Continuous Drain (Id) @ 25°C: | 210A |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 100A, 10V |
Gate Charge (Qg) (Max) @ Vgs: | 430nC @ 10V |
Operating Temperature: | -40°C ~ 175°C (TJ) |