RN2608(TE85L,F)
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SM6
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
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Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Packaging: | Cut Tape (CT) |
Supplier Device Package: | SM6 |
Resistor - Emitter Base (R2): | 47 kOhms |
Current - Collector (Ic) (Max): | 100mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6 |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Power - Max: | 300mW |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Frequency - Transition: | 200MHz |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | - |
Other Names: | RN2608(TE85LF)CT |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector Cutoff (Max): | 100nA (ICBO) |