RGW80TS65DGC11

RGW80TS65DGC11

  • 部品番号 RGW80TS65DGC11
  • メーカー LAPIS Semiconductor
  • 説明 650V 40A FIELD STOP TRENCH IGBT
  • Lead Free / RoHS
    lead rohs
部品番号

RGW80TS65DGC11

メーカー

LAPIS Semiconductor

説明

650V 40A FIELD STOP TRENCH IGBT

Lead Free / RoHS
lead rohs
在庫と価格
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仕様
Package / Case: TO-247-3
Mounting Type: Through Hole
Td (on/off) @ 25°C: 44ns/143ns
Supplier Device Package: TO-247N
Current - Collector (Ic) (Max): 78A
Switching Energy: 760µJ (on), 720µJ (off)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
IGBT Type: Trench Field Stop
Detailed Description: IGBT Trench Field Stop 650V 78A 214W Through Hole TO-247N
Voltage - Collector Emitter Breakdown (Max): 650V
Test Condition: 400V, 40A, 10 Ohm, 15V
Power - Max: 214W
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 15 Weeks
Gate Charge: 110nC
Input Type: Standard
Series: -
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 92ns
Current - Collector Pulsed (Icm): 160A
Operating Temperature: -40°C ~ 175°C (TJ)