SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.18A/0.1A US6
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Drain to Source Voltage (Vdss): | 20V |
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Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Packaging: | Cut Tape (CT) |
Supplier Device Package: | US6 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Mosfet Array N and P-Channel 20V 180mA, 100mA 200mW Surface Mount US6 |
FET Feature: | Logic Level Gate, 1.2V Drive |
Power - Max: | 200mW |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
FET Type: | N and P-Channel |
Series: | - |
Current - Continuous Drain (Id) @ 25°C: | 180mA, 100mA |
Other Names: | SSM6L35FU(TE85LF)CT |
Input Capacitance (Ciss) (Max) @ Vds: | 9.5pF @ 3V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 50mA, 4V |
Gate Charge (Qg) (Max) @ Vgs: | - |
Operating Temperature: | -55°C ~ 150°C (TJ) |